Silicon Germanium: Technology, Modeling, and Design
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Beschreibung"An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. " -Ron Wilson, EETimes "SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity.
InhaltsverzeichnisContributors. Foreword. Preface. Acknowledgments. Introduction. A Historical Perspective at IBM. Technology Development. Modeling and Characterization. Design Automation and Signal Integrity. Leading-Edge Applications. Appendix. Index. About the Authors.
PortraitRAMINDERPAL SINGH, PhD, is a Senior Engineer at IBM's RF/AMS Design Kit Group where he leads various projects related to transmission line model development, substrate modeling, and RF/mixed-signal design methodologies. Dr. Singh has authored numerous technical publications in the area of signal integrity, and is Director of VSIA, as well as a Senior Member of IEEE. DAVID L. HARAME, PhD, is Director of the RF/Analog and Mixed Signal Process Development, Modeling, and Design Automation area at IBM. He is an IEEE Fellow, Executive Committee member of the Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), and member of the Compact Model Council. MODEST M. OPRYSKO, PhD, joined IBM in 1986 and has held numerous management positions directing technology and application development activities spanning the areas of fiber optics, wireless (infrared and radio frequency technology), packaging technology, and circuit design devoted to communications applications. Currently, he is the Senior Manager of Communication Link Architecture, Design and Test.
Pressestimmen"The text is recommended for engineering libraries serving electrical and computer engineering programs and engineers." (E-STREAMS, October 2004)
Untertitel: New. Sprache: Englisch.
Verlag: JOHN WILEY & SONS INC
Erscheinungsdatum: November 2003
Seitenanzahl: 368 Seiten