Advances in Amorphous Semiconductors
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BeschreibungRecent progress has been made in understanding light-induced degradation in amorphous semiconductors, which is seen as the most limiting problem in device applications. This book compiles the current knowledge on the structural, electronic, and optical properties of these materials. Since amorphous materials differ significantly from their crystalline counterparts, the field needs to address some of the problems associated with the validity of the effective mass approximation, whether K is a good quantum number, and the concepts of phonons and excitons. This monograph effectively addresses those issues, providing a full treatment of both experimental and theoretical studies.
InhaltsverzeichnisIntroduction Structure Theory Of Effective Mass Optical Properties Photoluminescence Charge Carrier-Phonon Interaction Defects Electronic Transport Photoconductivity Reversible Photoinduced Effects Applications Index
Untertitel: 'Advances in Condensed Matter S'. Sprache: Englisch.
Verlag: ROUTLEDGE CHAPMAN HALL
Erscheinungsdatum: April 2003
Seitenanzahl: 336 Seiten