Principles of Chemical Vapor Deposition
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BeschreibungPrinciples of Chemical Vapor Deposition provides a simple introduction to heat and mass transfer, surface and gas phase chemistry, and plasma discharge characteristics. In addition, the book includes discussions of practical films and reactors to help in the development of better processes and equipment. This book will assist workers new to chemical vapor deposition (CVD) to understand CVD reactors and processes and to comprehend and exploit the literature in the field. The book reviews several disparate fields with which many researchers may have only a passing acquaintance, such as heat and mass transfer, discharge physics, and surface chemistry, focusing on key issues relevant to CVD. The book also examines examples of realistic industrial reactors and processes with simplified analysis to demonstrate how to apply the principles to practical situations. The book does not attempt to exhaustively survey the literature or to intimidate the reader with irrelevant mathematical apparatus. This book is as simple as possible while still retaining the essential physics and chemistry. The book is generously illustrated to assist the reader in forming the mental images which are the basis of understanding.
1. What's behind the facade? 2. Generic reactors and process considerations. 3. Tube and showerhead reactor examples.
2: Reactors without transport.
1. What goes in must go somewhere: Measuring gases. 2. Review: Kinetic theory. 3. The zero-dimensional reactor. 4. Zero-dimensional tube and showerhead examples.
3: Mass transport.
1. Introduction to transport. 2. Convection and diffusion. 3. Diffusion: Physics and math. 4. Fluid flow and convective transport. 5. When flows matter: The Knudsen number. 6. Tube and showerhead examples. 7. On to photons.
4: Heat transport.
1. What is heat (energy) transport? 2. Heat conduction and diffusion. 3. Convective heat transfer made (very) simple. 4. Natural convection. 5. Radiative heat transfer. 6. Temperature measurement. 7. Tube and showerhead examples.
5: Chemistry for CVD.
1. What does the C stand for anyway? 2. Volatility, the V in CVD. 3. Equilibrium: Where things are going. 4. Kinetics: The slowest step wins. 5. Real precursors for real films. 6. Tube reactor example. 7. A few final remarks.
6: Gas discharge plasmas for CVD.
1. Plasma discharges: An instant review. 2. The low-pressure cold-plasma state. 3. Key parameters for capacitive plasma state. 4. Alternative excitation methods. 5. Plasmas for deposition. 6. Plasma damage. 7. Technical details. 8. Ongoing example: Parallel plate reactor. 9. A remark on computational tools.
7: CVD films.
1. Why CVD? 2. Silicon dioxide. 3. Silicon nitride. 4. Tantalum pentoxide. 5. Metal deposition by CVD. 6. Concluding remarks.
8: CVD reactors.
1. CVD reactor configurations. 2. Tube reactors. 3. Showerhead reactors. 4. High density plasma reactors. 5. Injector-based atmospheric pressure reactors. 6. Reactor conclusions.
PortraitDaniel Dobkin has been involved in the development, manufacturing, and marketing of communications devices, components, and systems for over 28 years. He holds a BS from the California Institute of Technology, and MS and PhD degrees from Stanford University, all in Applied Physics. He is the author of three books and 30 technical publications, and holds 7 US patents as inventor or co-inventor. He has given numerous talks and classes on radio-frequency identification in the US and Asia. He specializes in physical-layer issues: radios and signal generation, antennas, and signal propagation.
Untertitel: 2003. Auflage. Book. Sprache: Englisch.
Erscheinungsdatum: April 2003
Seitenanzahl: 288 Seiten